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Home Home Discrete Semiconductors Single MOSFETs Transistors SIR826ADP-T1-GE3
SIR826ADP-T1-GE3
  • SIR826ADP-T1-GE3
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SIR826ADP-T1-GE3

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Manufacturer No:

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-SIR826ADP-T1-GE3

Package:

PowerPAK® SO-8

Datasheet:

SIR826ADP-T1-GE3

ECAD Model:

Description:

Quantity:

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In Stock : 850

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SIR826ADP-T1-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2800pF @ 40V.The drain current is the maximum continuous current the device can conduct, and this device has 23.8A continuous drain current (ID).Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 60A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 34 ns.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.2V threshold voltage.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SIR826ADP-T1-GE3 Features


a continuous drain current (ID) of 23.8A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 34 ns
a threshold voltage of 1.2V

SIR826ADP-T1-GE3 Applications


There are a lot of Vishay Siliconix SIR826ADP-T1-GE3 applications of single MOSFETs transistors.

  • LCD/LED TV
  • Battery Protection Circuit
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification
  • Telecom 1 Sever Power Supplies
  • General Purpose Interfacing Switch
  • Micro Solar Inverter
  • Motor drives and Uninterruptible Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Server power supplies
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SIR826ADP-T1-GE3

technical specifications, attributes, parameters and parts with similar specifications to SIR826ADP-T1-GE3.

  • Type
    Parameter
    Select All

  • Series

    TrenchFET®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Resistance

    5.5mOhm

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    C BEND

  • Pin Count

    8

  • JESD-30 Code

    R-PDSO-C5

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    6.25W Ta 104W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    6.25W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    9 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    5.5m Ω @ 20A, 10V

  • Vgs(th) (Max) @ Id

    2.8V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2800pF @ 40V

  • Current - Continuous Drain (Id) @ 25°C

    60A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    86nC @ 10V

  • Rise Time

    15ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    8 ns

  • Turn-Off Delay Time

    34 ns

  • Continuous Drain Current (ID)

    23.8A

  • Threshold Voltage

    1.2V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    60A

  • Drain to Source Breakdown Voltage

    80V

  • Max Junction Temperature (Tj)

    150°C

  • Height

    1.12mm

  • Radiation Hardening

    No

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    14 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    PowerPAK® SO-8

  • Number of Pins

    8

  • Weight

    506.605978mg

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    S17-0173-Single

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Digi-Reel®

  • Published

    2013

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