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IRF740PBF

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Manufacturer No:

IRF740PBF

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-IRF740PBF

Package:

TO-220-3

Datasheet:

IRF740PBF

ECAD Model:

Description:

IRF740PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRF740PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 550mOhm exists between the drain and source.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.Operating this transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF740PBF Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)

IRF740PBF Applications


There are a lot of Vishay Siliconix IRF740PBF applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Telecom 1 Sever Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • DC/DC converters
  • Micro Solar Inverter
  • Motor control
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Load switching
  • Solar Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF740PBF

technical specifications, attributes, parameters and parts with similar specifications to IRF740PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    11 Weeks

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Supplier Device Package

    TO-220AB

  • Weight

    6.000006g

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2011

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Termination

    Through Hole

  • Resistance

    550MOhm

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -55°C

  • Voltage - Rated DC

    400V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    10A

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    125W Tc

  • Element Configuration

    Single

  • Power Dissipation

    125W

  • Turn On Delay Time

    14 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    550mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1400pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    10A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    63nC @ 10V

  • Rise Time

    27ns

  • Drain to Source Voltage (Vdss)

    400V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    24 ns

  • Turn-Off Delay Time

    50 ns

  • Continuous Drain Current (ID)

    10A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    400V

  • Dual Supply Voltage

    400V

  • Input Capacitance

    1.4nF

  • Recovery Time

    790 ns

  • Max Junction Temperature (Tj)

    150°C

  • Drain to Source Resistance

    550mOhm

  • Rds On Max

    550 mΩ

  • Nominal Vgs

    4 V

  • Height

    19.89mm

  • Length

    10.41mm

  • Width

    4.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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