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IRF840PBF
IRF840PBF
880-IRF840PBF
TO-220-3
IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW
In Stock : 999
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IRF840PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF840PBF Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V
IRF840PBF Applications
There are a lot of Vishay Siliconix IRF840PBF applications of single MOSFETs transistors.
- Battery Protection Circuit
- Server power supplies
- Industrial Power Supplies
- LCD/LED/ PDP TV Lighting
- Motor control
- AC-DC Power Supply
- Lighting
- DC/DC converters
- Micro Solar Inverter
- Load switching
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IRF840PBF
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