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Home Home Discrete Semiconductors Single MOSFETs Transistors SI7611DN-T1-GE3
SI7611DN-T1-GE3
  • SI7611DN-T1-GE3
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SI7611DN-T1-GE3

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Manufacturer No:

SI7611DN-T1-GE3

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-SI7611DN-T1-GE3

Package:

PowerPAK® 1212-8

Datasheet:

SI7611DN-T1-GE3

ECAD Model:

Description:

SI7611DN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

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In Stock : 999

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Product Details

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SI7611DN-T1-GE3 Description


The SI7611DN-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.



SI7611DN-T1-GE3 Features


  • Halogen-free

  • 100% Rg tested

  • -50 to 150°C Operating temperature range

  • New low thermal resistance PowerPAK® package with small size and low 1.07mm profile



SI7611DN-T1-GE3 Applications


  • Industrial

  • Power Management


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SI7611DN-T1-GE3

technical specifications, attributes, parameters and parts with similar specifications to SI7611DN-T1-GE3.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    14 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    PowerPAK® 1212-8

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -50°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • Series

    TrenchFET®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Resistance

    25mOhm

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    C BEND

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    8

  • JESD-30 Code

    S-XDSO-C5

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Number of Channels

    1

  • Power Dissipation-Max

    3.7W Ta 39W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.7W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    10 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    25m Ω @ 9.3A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1980pF @ 20V

  • Current - Continuous Drain (Id) @ 25°C

    18A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    62nC @ 10V

  • Rise Time

    11ns

  • Drain to Source Voltage (Vdss)

    40V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    9 ns

  • Turn-Off Delay Time

    30 ns

  • Continuous Drain Current (ID)

    -18A

  • Threshold Voltage

    -1V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    9.3A

  • Drain to Source Breakdown Voltage

    -40V

  • Pulsed Drain Current-Max (IDM)

    20A

  • Avalanche Energy Rating (Eas)

    26 mJ

  • Max Junction Temperature (Tj)

    150°C

  • Nominal Vgs

    -3 V

  • Height

    1.17mm

  • Length

    3.05mm

  • Width

    3.05mm

  • Radiation Hardening

    No

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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