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Home Home Discrete Semiconductors Single MOSFETs Transistors SUM110P06-07L-E3
SUM110P06-07L-E3
  • SUM110P06-07L-E3
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SUM110P06-07L-E3

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Manufacturer No:

SUM110P06-07L-E3

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-SUM110P06-07L-E3

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

SUM110P06-07L-E3

ECAD Model:

Description:

SUM110P06-07L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

Quantity:

Add to RFQ list

In Stock : 999

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SUM110P06-07L-E3 Description


IRFR3708TRPBF developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.



SUM110P06-07L-E3 Features


Fast switching speed

Ultra-low gate impedance

Low power consumption

Strong driving ability

Full characterized avalanche voltage and current



SUM110P06-07L-E3 Applications


Analog circuits

Digital circuits


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SUM110P06-07L-E3

technical specifications, attributes, parameters and parts with similar specifications to SUM110P06-07L-E3.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    14 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Weight

    1.946308g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Cut Tape (CT)

  • Series

    TrenchFET®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    6.9MOhm

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Pin Count

    4

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    3.75W Ta 375W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.75W

  • Turn On Delay Time

    20 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    6.9m Ω @ 30A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    11400pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    110A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    345nC @ 10V

  • Rise Time

    160ns

  • Drain to Source Voltage (Vdss)

    60V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    240 ns

  • Turn-Off Delay Time

    110 ns

  • Continuous Drain Current (ID)

    -11A

  • Threshold Voltage

    -3V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    -60V

  • Pulsed Drain Current-Max (IDM)

    240A

  • Max Junction Temperature (Tj)

    175°C

  • Nominal Vgs

    -3 V

  • Height

    5.08mm

  • Length

    10.41mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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