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IRFD110PBF

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Manufacturer No:

IRFD110PBF

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-IRFD110PBF

Package:

4-DIP (0.300, 7.62mm)

Datasheet:

IRFD110PBF

ECAD Model:

Description:

IRFD110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFD110PBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 180pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.A device can conduct a maximum continuous current of [1A] according to its drain current.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. This device reduces its overall power consumption by using drive voltage (10V).

IRFD110PBF Features


a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
a threshold voltage of 4V

IRFD110PBF Applications


There are a lot of Vishay Siliconix IRFD110PBF applications of single MOSFETs transistors.

  • LCD/LED TV
  • Lighting, Server, Telecom and UPS.
  • Telecom 1 Sever Power Supplies
  • Solar Inverter
  • Motor control
  • General Purpose Interfacing Switch
  • Motor Drives and Uninterruptible Power Supples
  • Motor drives and Uninterruptible Power Supplies
  • Consumer Appliances
  • LCD/LED/ PDP TV Lighting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFD110PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFD110PBF.

  • Type
    Parameter
    Select All
  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.3W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    6.9 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    540m Ω @ 600mA, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    180pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    1A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    8.3nC @ 10V

  • Rise Time

    16ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    16 ns

  • Turn-Off Delay Time

    15 ns

  • Continuous Drain Current (ID)

    1A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    1A

  • Drain to Source Breakdown Voltage

    100V

  • Dual Supply Voltage

    100V

  • Recovery Time

    200 ns

  • Max Junction Temperature (Tj)

    175°C

  • Nominal Vgs

    4 V

  • Height

    4.57mm

  • Length

    5mm

  • Width

    6.29mm

  • REACH SVHC

    Unknown

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    8 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    4-DIP (0.300, 7.62mm)

  • Number of Pins

    4

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2008

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    540mOhm

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Current Rating

    1A

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Pin Count

    4

  • JESD-30 Code

    R-PDIP-T3

  • Qualification Status

    Not Qualified

  • Lead Pitch

    2.54mm

  • Number of Elements

    1

  • Row Spacing

    7.62 mm

  • Number of Channels

    1

  • Power Dissipation-Max

    1.3W Ta

  • Element Configuration

    Single

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