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  • IRG4BC30FDPBF

IRG4BC30FDPBF

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Manufacturer No:

IRG4BC30FDPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRG4BC30FDPBF

Package:

TO-220-3

Datasheet:

IRG4BC30FDPBF

ECAD Model:

Description:

IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Descriptions


The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.



Features


● Optimized for specific application conditions

● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

● IGBT co-packaged with HEXFREDTM ultrafast,

● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations

● Industry-standard TO-220AB package

● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).

● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

● Lead-Free



Applications


● HVAC

● Consumer Electronics

● Power Management

● Switching

● Amplification

● Converters

● Automatic Switch


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRG4BC30FDPBF

technical specifications, attributes, parameters and parts with similar specifications to IRG4BC30FDPBF.

  • Type
    Parameter
    Select All
  • Turn On Time

    69 ns

  • Test Condition

    480V, 17A, 23 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    1.8V @ 15V, 17A

  • Turn Off Time-Nom (toff)

    620 ns

  • Gate Charge

    51nC

  • Current - Collector Pulsed (Icm)

    124A

  • Td (on/off) @ 25°C

    42ns/230ns

  • Switching Energy

    630μJ (on), 1.39mJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    6V

  • Height

    8.77mm

  • Length

    10.54mm

  • Width

    4.69mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    16 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    1998

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    100W

  • Current Rating

    31A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    100W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    42 ns

  • Transistor Application

    POWER CONTROL

  • Rise Time

    26ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    230 ns

  • Collector Emitter Voltage (VCEO)

    1.8V

  • Max Collector Current

    31A

  • Reverse Recovery Time

    42 ns

  • JEDEC-95 Code

    TO-220AB

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    1.59V

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