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  • IRGP35B60PDPBF

IRGP35B60PDPBF

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Manufacturer No:

IRGP35B60PDPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRGP35B60PDPBF

Package:

TO-247-3

Datasheet:

IRGP35B60PDPBF

ECAD Model:

Description:

IRGP35B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

Purchasing and Inquiry

Description


The IRGP35B60PDPBF is a warp2 series IGBT with an ultrafast soft recovery diode. What is the purpose of a recovery diode? In most cases, rapid recovery diodes are employed for rectification. A low-frequency AC (sine) signal becomes a DC signal when it is converted. The time duration of a low-frequency signal is long. This indicates that the signal will take longer to complete its cycle.



Features


? Minimal Tail Current

? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

? Tighter Distribution of Parameters

? Higher Reliability

? NPT Technology, Positive Temperature Coefficient

? Lower VCE(SAT)

? Lower Parasitic Capacitances



Applications


? Uninterruptable Power Supplies

? Consumer Electronics Power Supplies

? Lead-Free

? Telecom and Server SMPS

? PFC and ZVS SMPS Circuits


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Payment Method

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The fee is charged according to the rule of PayPal.
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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRGP35B60PDPBF

technical specifications, attributes, parameters and parts with similar specifications to IRGP35B60PDPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    14 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2000

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Additional Feature

    HIGH RELIABILITY, LOW CONDUCTION LOSS

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    308W

  • Current Rating

    60A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    308W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    26 ns

  • Transistor Application

    POWER CONTROL

  • Rise Time

    6ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    110 ns

  • Collector Emitter Voltage (VCEO)

    2.55V

  • Max Collector Current

    60A

  • Reverse Recovery Time

    42 ns

  • JEDEC-95 Code

    TO-247AC

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    1.85V

  • Turn On Time

    34 ns

  • Test Condition

    390V, 22A, 3.3 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.55V @ 15V, 35A

  • Turn Off Time-Nom (toff)

    142 ns

  • IGBT Type

    NPT

  • Gate Charge

    160nC

  • Current - Collector Pulsed (Icm)

    120A

  • Td (on/off) @ 25°C

    26ns/110ns

  • Switching Energy

    220μJ (on), 215μJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    5V

  • Height

    20.7mm

  • Length

    15.87mm

  • Width

    5.3086mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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