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  • HGTG10N120BND

HGTG10N120BND

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Manufacturer No:

HGTG10N120BND

Manufacturer:

ON Semiconductor

HK JDW NO:

598-HGTG10N120BND

Package:

TO-247-3

Datasheet:

HGTG10N120BND

ECAD Model:

Description:

HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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HGTG10N120BND Description

 

  The HGIG1ON120BND is a  PunchThroughP IGBT design. This is a new member of the LGBT family of MOS gated high voltage switches. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of MOSFET and the low conduction loss of bipolar transistors. GBT is a development TA49290. The diode used is a development TA49189.

IGBT is an ideal choice for many high voltage switches.

In applications that require medium frequency operation with low conduction loss, such as AC and DC motor controls, power and solenoid relays and contactor drivers.

 

HGTG10N120BND Features


·35A1200V,Tc=25C

·1200V Switching SOA Capability

·Typical Fall Time.............140ns atT=150°·Short Circuit Rating

·Low Conduction Loss


HGTG10N120BND  Applications


high voltage switches

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

HGTG10N120BND

technical specifications, attributes, parameters and parts with similar specifications to HGTG10N120BND.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    7 Weeks

  • Lifecycle Status

    ACTIVE, NOT REC (Last Updated: 2 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Weight

    6.39g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2011

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    LOW CONDUCTION LOSS

  • HTS Code

    8541.29.00.95

  • Voltage - Rated DC

    1.2kV

  • Max Power Dissipation

    298W

  • Current Rating

    35A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    298W

  • Input Type

    Standard

  • Turn On Delay Time

    23 ns

  • Transistor Application

    MOTOR CONTROL

  • Rise Time

    165ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    165 ns

  • Collector Emitter Voltage (VCEO)

    1.2kV

  • Max Collector Current

    35A

  • Reverse Recovery Time

    70 ns

  • Collector Emitter Breakdown Voltage

    1.2kV

  • Voltage - Collector Emitter Breakdown (Max)

    1200V

  • Collector Emitter Saturation Voltage

    2.45V

  • Turn On Time

    32 ns

  • Test Condition

    960V, 10A, 10 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.7V @ 15V, 10A

  • Continuous Collector Current

    35A

  • Turn Off Time-Nom (toff)

    330 ns

  • IGBT Type

    NPT

  • Gate Charge

    100nC

  • Current - Collector Pulsed (Icm)

    80A

  • Td (on/off) @ 25°C

    23ns/165ns

  • Switching Energy

    850μJ (on), 800μJ (off)

  • Height

    20.82mm

  • Length

    15.87mm

  • Width

    4.82mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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