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HGTG10N120BND
HGTG10N120BND
598-HGTG10N120BND
TO-247-3
HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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HGTG10N120BND Description
The HGIG1ON120BND is a PunchThroughP IGBT design. This is a new member of the LGBT family of MOS gated high voltage switches. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of MOSFET and the low conduction loss of bipolar transistors. GBT is a development TA49290. The diode used is a development TA49189.
IGBT is an ideal choice for many high voltage switches.
In applications that require medium frequency operation with low conduction loss, such as AC and DC motor controls, power and solenoid relays and contactor drivers.
HGTG10N120BND Features
·35A1200V,Tc=25C
·1200V Switching SOA Capability
·Typical Fall Time.............140ns atT=150°·Short Circuit Rating
·Low Conduction Loss
HGTG10N120BND Applications
high voltage switches
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Step1Product | Step2Casing drivepipe | Step3Anti-static bag | Step4Packaging boxes | Step5Bar-code shipping tag |
HGTG10N120BND
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