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  • BD140-16

BD140-16

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Manufacturer No:

BD140-16

Manufacturer:

STMicroelectronics

HK JDW NO:

761-BD140-16

Package:

TO-225AA, TO-126-3

Datasheet:

BD140-16

ECAD Model:

Description:

BD140-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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BD140-16 Overview


DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 75MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Collector current can be as low as -3A volts at its maximum.

BD140-16 Features


the DC current gain for this device is 40 @ 2V 150MA
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 75MHz

BD140-16 Applications


There are a lot of STMicroelectronics BD140-16 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BD140-16

technical specifications, attributes, parameters and parts with similar specifications to BD140-16.

  • Type
    Parameter
    Select All
  • Subcategory

    Other Transistors

  • Max Power Dissipation

    1.25W

  • Base Part Number

    BD140

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.25W

  • Transistor Application

    AMPLIFIER

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    -80V

  • Max Collector Current

    -3A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    40 @ 2V 150MA

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    80V

  • Current - Collector (Ic) (Max)

    1.5A

  • Transition Frequency

    75MHz

  • Collector Emitter Saturation Voltage

    -500mV

  • Max Breakdown Voltage

    80V

  • Collector Base Voltage (VCBO)

    -80V

  • Emitter Base Voltage (VEBO)

    -5V

  • hFE Min

    25

  • Max Junction Temperature (Tj)

    150°C

  • Height

    13.2mm

  • Length

    7.8mm

  • Width

    2.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 6 months ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-225AA, TO-126-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    SOT-32-0016114E

  • Operating Temperature

    150°C TJ

  • Packaging

    Tube

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

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