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US6X4TR
US6X4TR
687-US6X4TR
6-SMD, Flat Leads
US6X4TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
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US6X4TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.280MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
US6X4TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6X4TR Applications
There are a lot of ROHM Semiconductor US6X4TR applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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US6X4TR
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