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SMBTA06E6327HTSA1
SMBTA06E6327HTSA1
376-SMBTA06E6327HTSA1
TO-236-3, SC-59, SOT-23-3
SMBTA06E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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SMBTA06E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.100MHz is present in the transition frequency.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts can be achieved.
SMBTA06E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
SMBTA06E6327HTSA1 Applications
There are a lot of Infineon Technologies SMBTA06E6327HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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SMBTA06E6327HTSA1
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