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  • SBAV99LT1G

SBAV99LT1G

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Manufacturer No:

SBAV99LT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-SBAV99LT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

SBAV99LT1G

ECAD Model:

Description:

SBAV99LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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SBAV99LT1G Overview


As long as the forward voltage is set to 1.25V, the device will operate.A maximum output voltage of 0.215A can be supported.As a general rule, surge currents should be monitored and kept below 500mA.As long as the forward voltage is set to 715mA, the device will operate.In devices such as this one, reverse voltage peak is set at 2.5μA.The maximum reverse leakage current from this semiconductor is 50μA, which corresponds to the reverse leakage current from that device when reverse biased.Electronics and electrical devices create heat as a byproduct of their primary action.In this electronic or electrical device, the maximum amount of 225mW heat is generated (energy is wasted).

SBAV99LT1G Features


1.25V forward voltage
a maximum output voltage of 0.215A
a peak voltage of 2.5μA
a reverse voltage peak of 2.5μA

SBAV99LT1G Applications


There are a lot of ON Semiconductor SBAV99LT1G applications of rectifier diode array.

  • Rectifiers for UBS
  • General Rectification
  • Free wheeling diode in low voltage converters
  • Crowbar applications
  • Rectifier for drives applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Battery chargers
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SBAV99LT1G

technical specifications, attributes, parameters and parts with similar specifications to SBAV99LT1G.

  • Type
    Parameter
    Select All
  • Min Operating Temperature

    -65°C

  • HTS Code

    8541.10.00.70

  • Subcategory

    Rectifier Diodes

  • Max Power Dissipation

    225mW

  • Terminal Form

    GULL WING

  • Base Part Number

    BAV99L

  • Pin Count

    3

  • Number of Elements

    2

  • Element Configuration

    Dual

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Diode Type

    Standard

  • Current - Reverse Leakage @ Vr

    1μA @ 100V

  • Power Dissipation

    225mW

  • Voltage - Forward (Vf) (Max) @ If

    1.25V @ 150mA

  • Forward Current

    715mA

  • Max Reverse Leakage Current

    50μA

  • Operating Temperature - Junction

    -65°C~150°C

  • Max Surge Current

    500mA

  • Output Current-Max

    0.215A

  • Halogen Free

    Halogen Free

  • Current - Average Rectified (Io)

    215mA DC

  • Forward Voltage

    1.25V

  • Max Reverse Voltage (DC)

    100V

  • Average Rectified Current

    715mA

  • Reverse Recovery Time

    6 ns

  • Peak Reverse Current

    2.5μA

  • Max Repetitive Reverse Voltage (Vrrm)

    70V

  • Peak Non-Repetitive Surge Current

    2A

  • Diode Configuration

    1 Pair Series Connection

  • Max Forward Surge Current (Ifsm)

    500mA

  • Recovery Time

    6 ns

  • Height

    1.01mm

  • Length

    3.04mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Diode Element Material

    SILICON

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • Series

    Automotive, AEC-Q101

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Max Operating Temperature

    150°C

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