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PZT751T1G
PZT751T1G
598-PZT751T1G
TO-261-4, TO-261AA
PZT751T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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PZT751T1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 75MHz.Breakdown input voltage is 60V volts.The maximum collector current is 2A volts.
PZT751T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
PZT751T1G Applications
There are a lot of ON Semiconductor PZT751T1G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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PZT751T1G
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