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PCP1208-TD-H
PCP1208-TD-H
598-PCP1208-TD-H
TO-243AA
PCP1208-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
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PCP1208-TD-H Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.With a collector emitter saturation voltage of 115mV, it offers maximum design flexibility.A VCE saturation (Max) of 200mV @ 35mA, 350mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 8V for high efficiency.The device exhibits a collector-emitter breakdown at 200V.Maximum collector currents can be below 1.5A volts.
PCP1208-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 200mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
PCP1208-TD-H Applications
There are a lot of ON Semiconductor PCP1208-TD-H applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
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PCP1208-TD-H
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