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NTMFS4C029NT1G

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Manufacturer No:

NTMFS4C029NT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTMFS4C029NT1G

Package:

8-PowerTDFN, 5 Leads

Datasheet:

NTMFS4C029NT1G

ECAD Model:

Description:

Single N-Channel Power MOSFET 30 V, 46 A, 5.88mO

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTMFS4C029NT1G

technical specifications, attributes, parameters and parts with similar specifications to NTMFS4C029NT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN, 5 Leads

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • Terminal Finish

    Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    FLAT

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Reach Compliance Code

    not_compliant

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • JESD-30 Code

    R-PDSO-F5

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    2.49W Ta 23.6W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    5.88m Ω @ 30A, 10V

  • Vgs(th) (Max) @ Id

    2.2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    987pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    15A Ta 46A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    18.6nC @ 10V

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Drain Current-Max (Abs) (ID)

    8.2A

  • Drain-source On Resistance-Max

    0.0058Ohm

  • Pulsed Drain Current-Max (IDM)

    132A

  • DS Breakdown Voltage-Min

    30V

  • Avalanche Energy Rating (Eas)

    31 mJ

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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United Kingdom/GBP Summary
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