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JANTXV2N3700
JANTXV2N3700
523-JANTXV2N3700
TO-206AA, TO-18-3 Metal Can
JANTXV2N3700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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Product Details
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JANTXV2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
JANTXV2N3700 Applications
There are a lot of Microsemi Corporation JANTXV2N3700 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
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JANTXV2N3700
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