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JANTXV2N2222AUB
JANTXV2N2222AUB
523-JANTXV2N2222AUB
3-SMD, No Lead
JANTXV2N2222AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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JANTXV2N2222AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in the supplier's device package UB.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.
JANTXV2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTXV2N2222AUB Applications
There are a lot of Microsemi Corporation JANTXV2N2222AUB applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
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JANTXV2N2222AUB
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