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JANTX2N5416S
JANTX2N5416S
523-JANTX2N5416S
TO-205AD, TO-39-3 Metal Can
JANTX2N5416S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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Product Details
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JANTX2N5416S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JANTX2N5416S Applications
There are a lot of Microsemi Corporation JANTX2N5416S applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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JANTX2N5416S
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