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JANTX2N2222A
JANTX2N2222A
523-JANTX2N2222A
TO-206AA, TO-18-3 Metal Can
JANTX2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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JANTX2N2222A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor comes in a supplier device package of TO-218.This device displays a 50V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts is possible.
JANTX2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218
JANTX2N2222A Applications
There are a lot of Microsemi Corporation JANTX2N2222A applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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JANTX2N2222A
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