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  • JAN2N2945A

JAN2N2945A

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Manufacturer No:

JAN2N2945A

Manufacturer:

Microsemi

HK JDW NO:

523-JAN2N2945A

Package:

TO-206AB, TO-46-3 Metal Can

Datasheet:

JAN2N2945A

ECAD Model:

Description:

JAN2N2945A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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JAN2N2945A Overview


This device has a DC current gain of 70 @ 1mA 500mV, which is the ratio between the base current and the collector current.An emitter's base voltage can be kept at 25V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.A maximum collector current of 100mA volts is possible.

JAN2N2945A Features


the DC current gain for this device is 70 @ 1mA 500mV
the emitter base voltage is kept at 25V
a transition frequency of 10MHz

JAN2N2945A Applications


There are a lot of Microsemi Corporation JAN2N2945A applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

JAN2N2945A

technical specifications, attributes, parameters and parts with similar specifications to JAN2N2945A.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    23 Weeks

  • Lifecycle Status

    IN PRODUCTION (Last Updated: 3 weeks ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-206AB, TO-46-3 Metal Can

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -65°C~200°C TJ

  • Packaging

    Bulk

  • Published

    2007

  • Series

    Military, MIL-PRF-19500/382

  • JESD-609 Code

    e0

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    400mW

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Pin Count

    3

  • Qualification Status

    Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE

  • Power Dissipation

    400mW

  • Case Connection

    COLLECTOR

  • Transistor Application

    CHOPPER

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    20V

  • Max Collector Current

    100mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    70 @ 1mA 500mV

  • Current - Collector Cutoff (Max)

    10μA ICBO

  • Transition Frequency

    10MHz

  • Collector Base Voltage (VCBO)

    25V

  • Emitter Base Voltage (VEBO)

    25V

  • Turn Off Time-Max (toff)

    450ns

  • Radiation Hardening

    No

  • RoHS Status

    Non-RoHS Compliant

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