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  • IRF5210STRRPBF

IRF5210STRRPBF

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Manufacturer No:

IRF5210STRRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF5210STRRPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRF5210STRRPBF

ECAD Model:

Description:

IRF5210STRRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRF5210STRRPBF Description

 

IRF5210STRRPBF MOSFET is a family of high-voltage MOSFETs built on a planar stripe with DMOS. IRF5210STRRPBF P-Channel MOSFET is designed to improve the overall efficiency of DC/DC converters. IRF5210STRRPBF Infineon Technologies is ideal for Battery Charging Circuit, Motor Drives, as well as Uninterruptible Power Suppliess.

 

 

IRF5210STRRPBF Features

 

Silicon optimized for applications

Optimized for broadest availability from distribution partners

Capable of being wave-soldered

Industry standard surface-mount power package

High-current carrying capability package

 

 

IRF5210STRRPBF Applications

 

Battery Charging Circuit

Motor Drives

Uninterruptible Power Supplies


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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF5210STRRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF5210STRRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    3.1W Ta 170W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    60m Ω @ 38A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2780pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    38A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    230nC @ 10V

  • Drain to Source Voltage (Vdss)

    100V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Drain Current-Max (Abs) (ID)

    38A

  • Drain-source On Resistance-Max

    0.06Ohm

  • Pulsed Drain Current-Max (IDM)

    140A

  • DS Breakdown Voltage-Min

    100V

  • Avalanche Energy Rating (Eas)

    120 mJ

  • RoHS Status

    ROHS3 Compliant

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