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FS150R12KT4BOSA1
FS150R12KT4BOSA1
376-FS150R12KT4BOSA1
Module
FS150R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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FS150R12KT4BOSA1 Description
FS150R12KT4BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS150R12KT4BOSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High efficiency diode
FS150R12KT4BOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
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Package
Step1Product | Step2Casing drivepipe | Step3Anti-static bag | Step4Packaging boxes | Step5Bar-code shipping tag |
FS150R12KT4BOSA1
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