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BCV46E6327HTSA1
BCV46E6327HTSA1
376-BCV46E6327HTSA1
TO-236-3, SC-59, SOT-23-3
BCV46E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at HK JDW
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BCV46E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Parts of this part have transition frequencies of 200MHz.Breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCV46E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46E6327HTSA1 Applications
There are a lot of Infineon Technologies BCV46E6327HTSA1 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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BCV46E6327HTSA1
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